Departments / Extreme-Scale, Nano & Fundamental Engineering / D07

Semiconductors, Electronics & Micro/Nano Systems

Device physics, microelectronics and VLSI, MEMS and NEMS, sensors and photonics, in the band where design, simulation and prototype meet.

Applied engineering Established science 10^-6 m to 10^-3 m 13 open

What this work is, and what it is not

Silicon is the most established engineering material there is, and a simulated device is still not a fabricated one. This division separates, in every report, what was simulated in TCAD or SPICE, what was measured on a fabricated part, and what a partner foundry has confirmed it can produce at yield.

Established science. Rests on settled physics and engineering. The work applies it; it is not what is under test here.

Scale bands are a research classification, not a claim of experimental reach. Most of this span cannot be probed by any apparatus that exists: nothing below about 10^-19 m has been measured directly, and anything at 10^26 m or beyond is inferred from observation rather than engineered. Every opportunity states the kind of work it actually is.

Where this division sits

Scale range 10^-6 m to 10^-3 m

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10^-100 m 10⁰ m 10¹⁰⁰ m

Experiments reach here 3 bands no experiment reaches This role

B06

Micro (10^-6 to 10^-3)
Microelectronics, MEMS, microfluidics and cellular biology. Mature fabrication and metrology.

Charter

This division designs devices, models electronic systems, develops sensors, analyses device performance, and supports prototype development with partner fabrication facilities. It is an engineering division: its work is judged against a specification.

Domains

Semiconductor engineeringDevice physicsNanoelectronicsMicroelectronicsVLSIMEMSNEMSSensorsPhotonicsIntegrated systems

Disciplines

Semiconductors Electronics Physics Materials science Scientific computing

Works with

Divisions this one collaborates with routinely.

D03D05D06D08D10D12

13 open opportunities

Grouped by career rung. Every posting states its own classification, its scale range and what it expects you to have already done.

Level 1 4

Electronics Intern

A circuit designed to a written specification, simulated, and checked by hand calculation.

Applied engineering Established science L1 · Research and Engineering Intern Internship On-site / Hybrid — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

MEMS Intern

A micromechanical structure modelled in FEM, with its resonance compared against an analytic estimate.

Applied engineering Established science L1 · Research and Engineering Intern Internship On-site / Hybrid — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Semiconductor Intern

One device characteristic derived, simulated, and compared against published measurements.

Applied engineering Established science L1 · Research and Engineering Intern Internship On-site / Hybrid — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

VLSI Intern

A small digital block written in RTL, simulated, and verified against a testbench you wrote.

Applied engineering Established science L1 · Research and Engineering Intern Internship On-site / Hybrid — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Level 3 6

MEMS/NEMS Engineer

Micro and nanoelectromechanical structures, from multiphysics model to a characterised part.

Prototype Active experimental research L3 · Engineer and Scientist Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-9 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Photonics Engineer

Optical and photonic components, designed and characterised against an optical budget.

Applied engineering Established science L3 · Engineer and Scientist Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 7 more

Process Engineer

The fabrication flow with partner facilities: integration, variation, and yield-limiting steps.

Prototype Active experimental research L3 · Engineer and Scientist Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 7 more

Device Engineer

The device as built: characterisation, failure analysis, and why measured differs from simulated.

Applied engineering Established science L3 · Engineer and Scientist Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Nanoelectronics Engineer

Electronics at the scale where interfaces and contacts dominate the electrical behaviour.

Applied engineering Established science L3 · Engineer and Scientist Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-9 m to 10^-6 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Semiconductor Engineer

Device design and TCAD modelling against a specification, including process variation.

Applied engineering Established science L3 · Engineer and Scientist Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Level 5 1

Senior Semiconductor Engineer

Several device programmes at once, and the specification discipline applied across them.

Applied engineering Established science L5 · Senior Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Level 6 1

Semiconductor Systems Lead

What this division builds, who builds it, and the rule that simulated and fabricated are never conflated.

Applied engineering Established science L6 · Lead Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Level 7 1

Principal Device Engineer

The division's technical direction and the hardest problems between a model and a manufacturable part.

Applied engineering Established science L7 · Principal Full-Time On-site — Kolkata, West Bengal, India

Scale 10^-6 m to 10^-3 m

Can derive or explain the current-voltage characteristic of a diode or a MOSFET from device physics. · Has simulated a circuit in SPICE and compared the result against a hand calculation. · Semiconductor physics: carriers, doping, band structure, junctions. · Can read a datasheet and identify the conditions a specification was measured under. + 5 more

Other divisions in this department

Ultra-Fundamental & Mathematical Physics Particle, High-Energy & Nuclear Systems Quantum, Atomic & Precision Systems Molecular Engineering & Computational Chemistry Nano Engineering & Nanotechnology Materials & Advanced Matter Computer Science, AI & Scientific Computing Mathematics & Computational Foundations Mechanical, Robotics & Multi-Scale Systems Civil, Structural & Macro-Scale Systems Biology, Biotechnology & Bio-Nano Systems Energy, Environment & Climate Materials Aerospace, Space & Extreme Environment Engineering Astrophysics, Cosmology & Extreme-Scale Modelling